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Study of the influence of indium segregation and Internal electric-field on the optical properties of III-V quantum wells heterostructures

10.24050/reia.v18i36.1511
Published 2021-06-01
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Abstract

The surface segregation in III-V semiconductor alloys produce abrupt interfaces, and modifies the potential profiles, alternating the electronic states in the quantum well and the emission energy in the photoluminescence spectrum. In this work, the Schrödinger equation is solved by means of a power series considering a Cauchy type symmetrical potential, which is soft and decreasing to infinity. This potential is proposed due to the changes in the potential profile from quantum well by the segregation of atoms during the growth process. The ground state energy was determined according to the parameters that characterize this potential. This model was applied to the particular case of indium segregation in the InGaAs/GaAs system. The ground state energy transition is calculated from the difference in energy between the electron and hole in function of well width. These calculations are in agreement with the reported photoluminescence peak energies. In addition, the influence of the electrical field due to the piezoelectric effect on the photoluminescence emission is studied. For this purpose, an electron variational wavefunction was considered and the ground state energy transition in the active region of the heterostructure was calculated from the difference in energy between the electron and hole in function of well width and the electric field. For InGaAs/GaAs quantum wells, the ground energy is adjusted within this model coinciding our theoretical calculations with the experimental part.

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